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| VVZ 24 Three Phase Half Controlled Rectifier Bridge IdAVM = 27 A VRRM = 1200-1600 V 2 1 6 3 1 2 5 3 6 4 7 8 VRSM VDSM V 1300 1500 1700 VRRM VDRM V 1200 1400 1600 Type 5 7 4 VVZ 24-12io1 VVZ 24-14io1 VVZ 24-16io1 8 Symbol IdAV IdAVM IFRMS, ITRMS IFSM, ITSM Test Conditions TK = 100C; module module per leg TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 21 27 16 300 320 270 290 450 430 365 350 150 A A A A A A A A2s A2s A2s A2s A/ms Features q q q q q Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Soldering terminals UL registered E 72873 Applications q I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 q q Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging Electric drives and auxiliaries Advantages q q q (di/dt)cr TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 1/3 * IdAV diG/dt = 0.3 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) tp = 30 ms tp = 500 ms tp = 10 ms 500 1000 10 A/ms V/ms V W W W W C C C V~ V~ Nm lb.in. g Easy to mount with two screws Space and weight savings Improved temperature and power cycling (dv/dt)cr VRGM PGM PGAVM TVJ TVJM Tstg VISOL Md Weight Dimensions in mm (1 mm = 0.0394") TVJ = TVJM IT = ITAVM 10 5 1 0.5 -40...+125 125 -40...+125 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32 UNF) 3000 3600 2-2.5 18-22 28 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 1-3 303 VVZ 24 Symbol IR, ID VF, VT VT0 rT VGT IGT Test Conditions VR = VRRM; VD = VDRM IF, IT = 30 A, TVJ = 25C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C TVJ = 125C VD = 2/3 VDRM VD = 2/3 VDRM TVJ = 25C TVJ = -40C TVJ = 125C TVJ = TVJM TVJ = 25C Characteristic Values 5 0.3 1.45 mA mA V 1 V 16 mW 1.0 1.2 65 80 50 0.2 5 150 200 100 100 2 V V mA mA mA V mA mA mA mA mA ms ms mC K/W K/W K/W K/W VGD IGD IL TVJ = TVJM; TVJ = TVJM; IG = 0.3 A; tG = 30 ms diG/dt = 0.3 A/ms IH tgd tq Qr RthJC RthJH dS dA a TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms TVJ = 125C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration typ. 150 75 2.1 0.35 2.7 0.45 7 mm 7 mm 50 m/s2 (c) 2003 IXYS All rights reserved 2-3 VVZ 24 10 V VG 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 1 1 2 3 6 4 5 4: PGAV = 0.5 W IGD, TVJ = 125C 5: PGM = 1 W 6: PGM = 10 W 0.1 1 10 100 1000 IG mA Fig. 1 Surge overload current per chip IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) per chip Fig. 3 Gate trigger characteristics Triggering: Fig. 4 Power dissipation versus direct output current and ambient temperature 3 ZthJK K/W ZthJK 2 Constants for ZthJK calculation 1 i 1 2 3 10-2 10-1 100 101 s t 102 Rthi (K/W) 0.17 1.4 1.1 ti (s) 0.028 0.44 2.6 0 10-3 (c) 2003 IXYS All rights reserved 3-3 750 Fig. 5 Transient thermal impedance junction to heatsink |
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